dmp1045ufy4 document number: ds31853 rev. 7 - 2 1 of 6 www.diodes.com september 2012 ? diodes incorporated dmp1045ufy4 new product advance information p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) max i d t a = 25c -12v 32m ? @ v gs = -4.5v -5.5a 45m ? @ v gs = -2.5v -4.5a 75m ? @ v gs = -1.8v -3.2a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions ? analog switch features ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 3kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: x2-dfn2015-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? nipdau ov er copper leadframe. solderable ? per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging dmp1045ufy4-7 x2-dfn2015-3 3,000/tape & reel DMP1045UFY4-13 x2-dfn2015-3 10,000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information top view bottom view internal schematic 15p = marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) 15p ym d s g x2-dfn2015-3 esd protected to 3kv e4
dmp1045ufy4 document number: ds31853 rev. 7 - 2 2 of 6 www.diodes.com september 2012 ? diodes incorporated dmp1045ufy4 new product advance information maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss -12 v gate-source voltage v gss 8 v continuous drain current v gs = -4.5v (note 6) steady state t a = +25c t a = +70c i d -5.5 -4.3 a t<5s t a = +25c t a = +70c -6.5 -5.1 a maximum continuous body diode forward current (note 6) i s -2.2 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -25 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) t a = +25c p d 0.7 w t a = +70c 0.4 thermal resistance, junction to ambient (note 5) steady state r ja 193 c/w t<5s 135 power dissipation (note 6) t a = +25c p d 1.7 w t a = +70c 1.1 thermal resistance, junction to ambient (note 6) steady state r ja 73 c/w t<5s 52 thermal resistance, junction to case (notes 6) steady state r jc 17 operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -12 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25c i dss - - -1.0 a v ds = -12v, v gs = 0v gate-source leakage i gss - - 10 a v gs = 8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.3 -0.55 -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 26 32 m ? v gs = -4.5v, i d = -4.0a 31 45 v gs = -2.5v, i d = -3.5a 51 75 v gs = -1.8v, i d = -2.7a forward transfer admittance |y fs | - 12 - s v ds = -5v, i d = -4a diode forward voltage v sd - -0.6 - v v gs = 0v, i s = -1a dynamic characteristics (note 8) input capacitance c iss - 1291 - pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss - 266 - pf reverse transfer capacitance c rss - 242 - pf gate resistnace r g - 13 - ? v ds = 0v, v gs = 0v, f = 1.0mhz switching characteristics (note 8) total gate charge (v gs = -8v) q g - 23.7 - nc v ds = -10v, i d = -4a total gate charge (v gs = -4.5v) q g - 14.7 nc gate-source charge q g s - 1.8 - nc gate-drain charge q g d - 4.6 - nc turn-on delay time t d ( on ) - 14 - ns v ds = -10v, v gs = -4.5v, r l = 2.5 , r g = 3.0 turn-on rise time t r - 22 - ns turn-off delay time t d ( off ) - 74 - ns turn-off fall time t f - 75 - ns notes: 5. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 6. device mounted on 1? x 1? fr-4 pcb wi th high coverage 2oz. copper, single sided. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
dmp1045ufy4 document number: ds31853 rev. 7 - 2 3 of 6 www.diodes.com september 2012 ? diodes incorporated dmp1045ufy4 new product advance information 0 0.5 1.0 1.5 2.0 2.5 3.0 -v , drain -source voltage (v) fig. 1 typical output characteristics ds 0 5 10 15 20 -i , d r ain c u r r en t (a) d v= -1.2v gs v= -1.5v gs v= -1.8v gs v= -2.5v gs v= -4.5v gs v= -8.0v gs v= -2.0v gs 0 5 10 15 20 0 0.5 1.0 1.5 2.0 2.5 -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics -i , d r ai n c u r r e n t (a) d t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v = -5.0v ds 0.02 0.04 0.06 0.08 0.12 04 8121620 0.10 0 -i , drain source current (a) fig. 3 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) v = -4.5v gs v = -2.5v gs v = -1.8v gs 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.18 0.20 0.10 0 012345678 -v , gate-source voltage (v) gs fig. 4 typical drain-source on-resistance vs. gate-source voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) i = -4.0a d 0.02 0.04 0.06 0 5 10 15 20 0 -i , drain source current (a) fig. 5 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v= -4.5v gs -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 6 on-resistance variation with temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = -4.5v i = -10a gs d v = -2.5v i = -5a gs d
dmp1045ufy4 document number: ds31853 rev. 7 - 2 4 of 6 www.diodes.com september 2012 ? diodes incorporated dmp1045ufy4 new product advance information 0.02 0.04 0.06 0.08 0.10 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 7 on-resistance variation with temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = -4.5v i= a gs d -10 v=5v i= a gs d -2. -5 0.2 0.4 0.6 0.8 1.0 0 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 8 gate threshold variation vs. ambient temperature a v, g a t e t h r es h o ld v o l t a g e (v) gs(th) -i = 250a d 12 16 20 0.4 0.6 0.8 1.0 1.4 -v , source-drain voltage (v) fig. 9 diode forward voltage vs. current sd 1.2 0 4 8 -i , s o u r c e c u r r e n t (a) s t= 25c a 10,000 02 4 6 81012 1,000 100 10 -v , drain-source voltage (v) fig. 10 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e (p f ) t c oss c rss f = 1mhz c iss 0 2 4 6 8 0 5 10 15 20 25 q , total gate charge (nc) fig. 11 gate-charge characteristics g -v , g a t e-s o u r c e v o l t a g e (v) gs v = -10v i= -4a ds d 0.1 1 10 100 -v , drain-source voltage (v) fig. 12 soa, safe operation area ds 0.01 0.1 1 10 100 -i , d r ain c u r r en t (a) d t = 150c t = 25c j(max) a v = -8v single pulse gs dut on 1 * mrp board r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w
dmp1045ufy4 document number: ds31853 rev. 7 - 2 5 of 6 www.diodes.com september 2012 ? diodes incorporated dmp1045ufy4 new product advance information 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 13 transient thermal resistance 0.001 0.01 0.1 r(t), t r a n sie n t t h e r mal r esis t a n c e 1 r (t) = r(t) * r r = 193c/w duty cycle, d = t1/ t2 ? ja ja ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. x2-dfn2015-3 dim min max typ a ? 0.40 ? a1 0 0.05 0.02 a3 ? ? 0.13 b 0.20 0.30 0.25 d 1.45 1.575 1.50 d2 1.00 1.20 1.10 e ? ? 0.50 e 1.95 2.075 2.00 e2 0.70 0.90 0.80 l 0.25 0.35 0.30 z ? ? 0.125 all dimensions in mm dimensions value (in mm) c 1.00 g 0.15 x 0.31 x1 1.30 y 0.50 y1 1.00 y2 0.65 x1 x c y y1 g y2 x seating plane a a3 a1 d2 e2 b d e z l e
dmp1045ufy4 document number: ds31853 rev. 7 - 2 6 of 6 www.diodes.com september 2012 ? diodes incorporated dmp1045ufy4 new product advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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